7,059 research outputs found

    Impurity sources at the first wall

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    A Graphene Field-Effect Device

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    In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.Comment: 12 pages, 3 figure

    Ferromagnetism and temperature-dependent Electronic Structure of hcp Gadolinium

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    We use a combination of a many-body model analysis with an ab initio band structure calculation to derive the temperature dependent electronic quasiparticle structure of the rare-earth metal Gadolinium. As a local-moment system Gd is properly represented by the ferromagnetic (multiband) Kondo-lattice model (s-f (d-f) model). The single-particle part of the model-Hamiltonian is taken from an augmented spherical wave (ASW) band calculation. The proposed method avoids the double counting of relevant interactions by exploiting an exact limiting case of the model and takes into account the correct symmetry of atomic orbitals. The a priori only weakly correlated 5d conduction bands get via interband exchange coupling to the localized 4f levels a distinct temperature dependence which explains by a Rudermann-Kittel-Kasuya-Yosida (RKKY) -type mechanism the ferromagnetism of Gd. We get a self-consistently derived Curie temperature of 294.1 K and a T=0-moment of 7.71 ΞΌB\mu_{\rm B}, surprisingly close to the experimental values. The striking induced temperature-dependence of the 5d conduction bands explains respective photoemission data. The only parameter of the theory (interband exchange coupling J) is uniquely fixed by the band calculation.Comment: 12 pages, 9 figure

    The visible, imaging diode arrays on Alcator C-Mod

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    Completeness for the coalgebraic cover modality

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    Microstructural characterization of AISI 431 martensitic stainless steel laser-deposited coatings

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    High cooling rates during laser cladding of stainless steels may alter the microstructure and phase constitution of the claddings and consequently change their functional properties. In this research, solidification structures and solid state phase transformation products in single and multi layer AISI 431 martensitic stainless steel coatings deposited by laser cladding at different processing speeds are investigated by optical microscopy, Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), orientation imaging microscopy (OIM), ternary phase diagram, Schaeffler and TTT diagrams. The results of this study show how partitionless solidification and higher solidification rates alter the microstructure and phase constitution of martensitic stainless steel laser deposited coatings. In addition, it is shown that while different cladding speeds have no effect on austenite–martensite orientation relationship in the coatings, increasing the cladding speed has resulted in a reduction of hardness in deposited coatings which is in contrast to the common idea about obtaining higher hardness values at higher cladding speeds.

    Measurement of Lande g factor of 5D5/2 state of BaII with a single trapped ion

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    We present the first terrestrial measurement of the Lande g factor of the 5D5/2 state of singly ionized barium. Measurements were performed on single Doppler-cooled 138Ba+ ions in a linear Paul trap. A frequency-stabilized fiber laser with nominal wavelength 1.762 um was scanned across the 6S1/25D5/2 transition to spectroscopically resolve transitions between Zeeman sublevels of the ground and excited states. From the relative positions of the four narrow transitions observed at several different values for the applied magnetic field, we find a value of 1.2020+/-0.0005 for g of 5D5/2.Comment: 3 figure

    Method of filling databases of electronic components based on the uniform tables of document parameters

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    Π Π°ΡΡΠΌΠ°Ρ‚Ρ€ΠΈΠ²Π°ΡŽΡ‚ΡΡ вопросы Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠΈ Π°Π²Ρ‚ΠΎΠΌΠ°Ρ‚ΠΈΠ·ΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ наполнСния Π±Π°Π· Π΄Π°Π½Π½Ρ‹Ρ… элСктрорадиоиздСлий, основанной Π½Π° объСдинСнии Ρ‚Π°Π±Π»ΠΈΡ† ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€ΠΎΠ² Π½ΠΎΡ€ΠΌΠ°Ρ‚ΠΈΠ²Π½ΠΎΠ³ΠΎ Π΄ΠΎΠΊΡƒΠΌΠ΅Π½Ρ‚Π°. ΠŸΠΎΠΊΠ°Π·Π°Π½Ρ‹ Π΅Ρ‘ основныС этапы ΠΈ особСнности. ΠŸΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½ΠΎ ΠΎΡ„ΠΎΡ€ΠΌΠ»ΡΡ‚ΡŒ связи ΠΌΠ΅ΠΆΠ΄Ρƒ ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Π°ΠΌΠΈ ΠΈ ΠΏΡ€Π°Π²ΠΈΠ»ΠΎ формирования наимСнования элСмСнтов Π² тСкстовом Ρ„Π°ΠΉΠ»Π΅-шаблонС. ΠŸΡ€ΠΈΠ²ΠΎΠ΄ΠΈΡ‚ΡΡ ΠΏΡ€Π΅Π΄Π²Π°Ρ€ΠΈΡ‚Π΅Π»ΡŒΠ½Π°Ρ ΠΎΡ†Π΅Π½ΠΊΠ° Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ оформлСния Ρ„Π°ΠΉΠ»ΠΎΠ²-шаблонов Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹Ρ… Π½ΠΎΡ€ΠΌΠ°Ρ‚ΠΈΠ²Π½Ρ‹Ρ… Π΄ΠΎΠΊΡƒΠΌΠ΅Π½Ρ‚ΠΎΠ². Показано ΠΏΡ€ΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠΈ для автоматичСского наполнСния тСхнологичСских справочников.The problems of the development of the methodology for the automated filling of databases of electronic products based on the integration of the parameters tables of the normative document are considered. Its main stages and features are shown. It is proposed to formalize the relationship between the parameters and the rule for the formation of the names of elements in a text file-template. A preliminary estimate of the time for creating template files for various normative documents is given. The application of the technique for automatic filling oftechnological databases is shown
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